Barras de silicio

 

Mono-crystalline Silicon Ingot Spec.
 

 

 

Growth Method CZ
Conductive Type P
Dopant Boron(B)
Orientation <100>
Off Orientation <±3°
Resistivity(ρ) 1-3Ω•cm/3-6Ω•cm
Minority Carrier Lifetime(τd) >10μS
Oxygen Content (Oi) ≤1.0*1018at/cm3
Carbon Content(C) ≤5.0*1016at/cm3
Disicoation Density(Nd) ≤3000/ cm2
Appearance No chip,no nick
Diagonal 6″,8″

 


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